sp3 hot filament diamond deposition
systems are widely used to produce highly uniform diamond films on silicon
wafers ranging from 50 to 300mm. This process is known as diamond-on-silicon,
or DOS. The process leaves an exposed diamond surface for device
developers, whether for active circuits or MEMS.
A recent
extension of DOS is silicon-on-diamond, or SOD. Here a thin layer of
silicon is applied on top of the DOS wafer. This provides a known interface,
silicon, to the device maker. SOD is particularly helpful to companies that are
developing III-V devices on silicon. Since the thin layer of silicon has
minimal impact on thermal conductivity, the device manufacturer is able to work
with a known interface on a high thermally conductive substrate.
The SOD process is leading to a commercial scalability that
is very difficult to achieve with other substrates, such as silicon carbide.
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