DiaTherm™ CVD Thick-Film Diamond Heat Spreaders

Designed for thermal management applications, sp3 DiaTherm™ heat spreaders exhibit exceptionally high thermal diffusivity and conductivity. Typical applications include mountings for laser diodes, laser diode arrays, and high power transistors. sp3 CVD deposition technology now allows cost-effective incorporation of sp3 diamond heat spreaders into temperature sensitive devices.

Fabrication
sp3 spreaders are laser-cut from sheets of pure diamond formed by chemical vapor deposition in DC torch reactors.

Metalization
We can supply metalization to match your specific requirements. Please describe your application.

Free sample offer
For new customers we will supply samples to your specifications. Heat spreader sample request form.
 


Typical heat spreaders. For sizes available please see specifications.
 
SPECIFICATIONS
Material  
  Chemical composition: 100% polycrystalline diamond (carbon).
  Density: 3.5 g/cm.3
  Poisson's ratio: 0.2.
  Young's modulus: 1.22 Gpa.
  Dielectric constant: 5.7 at 1 MHz.
  Electric resistivity: 1013 – 1016 ohm-cm (1015 ohm-cm typical).
  Dielectric strength: 1.0 x 107 V/cm.
  Loss tangent: 6.0 x 10-4 at 40 Hz.
  Thermal conductivity: Up to 1400 W/m°K (1000 – 1200 W/m°K typical).
  Tensile strength: 290 kg/mm2.
  Hardness: 1.0 x 104 kg/mm2.
  Compressive strength: >110 Gpa.
  CTE 1.5–1.8 x 10-6/°K
Polishing    
  Surface finish A face: <80 nm Ra.
  Surface finish B face: <0.5 µm Ra. (Better finishes can be achieved on request.)
  Thickness tolerance ±0.020 mm
Laser Cutting  
  Corner radius tolerances: < 3µm.
  Dimensional accuracy: ±0.050 mm typical.
  Chipout: 20 µm to 50 µm typical. (10 µm minimum.)
Standard Sizes  
  Polished coupons: Up to 25 mm x 25 mm.
  Raw thickness: Between 0.3 mm and 1.5 mm.
  Polished thickness: Between 0.2 mm and 1.0 mm.
  Special sizes and thicknesses on request.

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Diamond heat spreaders maximize emitter power and lifetime
Heat spreaders rapidly remove heat generated by optoelectronic device emitters through thermal conduction to a heat sink. The heat spreader also spreads the heat from the smaller area of the chip to the larger heat sink.
  Optoelectronic device performance is dependent upon the junction temperature on the chip. Lower junction temperature results in better performance—such as emitted light wavelength and conversion efficiency—as well as longer lifetime.
  In a distributed-feedback (DFB) edge-emitting laser, the laser chip sits on its heat spreader, which then rests on top of a heat-sink submount and optical bench, as shown in the diagram. Underneath the optical bench a thermoelectric cooler (TEC) can be placed for active temperature control. The heat-sink optical base or TEC is attached to the device package base through which laser chip and TEC heat is discharged to the printed-circuit-board mount.
  For more information see this article.
 
     

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Click for larger image.   Major advances in diamond deposition technology have, in recent years, dramatically lowered the cost of CVD diamond. As of 2006 sp3 is able to offer deposition of diamond on silicon wafers for approximately $1 per square mm.

  Consequently cost need no longer be a deterrent to applying diamond, with its superlative heat dissipation capabilities, to the manufacture of advanced semiconductor devices.

Click on image to expand.

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For price and delivery quotation

please call 877-773-9940 or 408-492-0630